国家/地区 世界知识产权组织（6）
IPC部 B（6）
IPC大类 B32（6）
IPC小类 B32B（6）
IPC C23C016/01（6）
发明人 JOHNSON B Y（2） MAZUMDER P（2）
公开年
申请年 2011（2） 
专利权人 CORNING INC（2）

Carrier substrate for transferring transfer layer from carrier substrate to product substrate, comprises carrier base substrate, protective layer, and transfer layer grown on protective layer.

BURGGRAF J, JUERGEN B

Method for transferring graphene film to substrate, involves contacting exposed graphene surface with target substrate formed by removing growth substrate that is contacted by second surface of graphene film.

JOHNSON B Y, LIU X, MAZUMDER P

Method for transferring high-quality chemical vapor deposition-grown monolayers of graphene from copper formation substrates to target substrates, involves transferring graphene layer formed on formation substrate to target substrate.

JOHNSON B Y, MAZUMDER P, SONI K K

Formation of graphene scroll for synthesizing graphene article, involves annealing catalyst substrate in hydrogen gas, exposing substrate to reaction gas mixture, detaching substrate from graphene and consolidating synthesized graphene.

VLASSIOUK I V, IVANOV I N, DATSKOS P G

Method of directly synthesizing uniform multilayer graphene of semiconductor device, involves passing reaction gas into reaction chamber, after temperature in reaction chamber reaches specific level.

ZHONG Z, LEE S, LEE K

Carbon-film laminate used for graphene-based electronic device, has monocrystal substrate, copper single-crystal thin film epitaxially grown on substrate, and graphene formed on copper single-crystal thin film.

HASEGAWA MASATAKA, ISHIHARA MASATOU, KOGA YOSHINORI, KIM JAEHO, TSUGAWA KAZUO, IIJIMA SUMIO, HASEGAWA M, ISHIHARA M, KOGA Y, KIM J, TSUGAWA K, IIJIMA S, YOSHINORI K, HO K J, KAZUO T, SUMIO I, MASATAKA H, MASATOU I, JAEHO K