国家/地区 韩国（2） 美国（2）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C23C016/48（3）
发明人
公开年 2013（3）
申请年 2012（2） 
专利权人

Preparing graphene used in e.g. memory device, comprises forming organic thin film on substrate, irradiating upper portion of organic thin film with radiation to cross-link organic thin film, and then carbonizing.

CHOI J H, JUNG C H, HWANG I T, KANG D W

Method for forming e.g. multi-layered graphene layer deposited on glass substrate, involves utilizing microwave with electron cyclotron resonance mechanism to excite carbon-containing gas to deposit graphene layer on substrate.

HUANG K, CHANG C, HSIEH Y, CHIU P, MEDINA H, QIU B, XIE Y, ZHANG Z, MEDIONA H, HUANG K P, CHANG C C, HSIEH Y T, CHIU P W

Manufacture of graphene film for forming graphene, involves growing monocrystal metal layer on substrate, and forming graphene thin film on metal layer.

JOO S J, BAHNG W, CHA S I