国家/地区 日本（3） 世界知识产权组织（3）
IPC部 C（3）
IPC大类 C01（3） C23（3）
IPC小类 C01B（3）
IPC C01B032/186（3）
发明人 MATSUMOTO T（3）
公开年 2022（2）
申请年
专利权人 TOKYO ELECTRON LTD（3）

Film forming method by loading substrate into processing container, forming graphene film on substrate with plasma of process gas comprising carbon-containing gas, forming doped graphene film on substrate and/or graphene film with plasma of process gas comprising dopant gas.

YAMADA H, IFUKU R, MATSUMOTO T, KABUKI N

Forming film by carrying substrate having recess into processing container, placing on mounting table provided in processing container, using plasma of mixed gas containing inert gas and carbon-containing gas, while applying high frequency bias, and forming graphene film on substrate.

SUGIURA M, MATSUMOTO T

Production of graphene for wiring film of three-dimensional stacked memory, involves decomposing carbon-containing gas with low reactivity in space which opposes substrate, and decomposing carbon-containing gas with high reactivity.

KAGAYA M, MATSUMOTO T, NISHIDE D