国家/地区 世界知识产权组织（4）
IPC部 C（4）
IPC大类 C01（4） C23（4） H01（2）
IPC小类 C01B（4）
IPC C23C016/54（4）
发明人
公开年 2022（3）
申请年 2021（4）
专利权人 APPLIED MATE.（2）

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Graphene production facility for use in chemical vapor deposition of steam on rolls of substrate, comprises solar thermal collector formed by one mirror concentrating radiation solar on set of four concentric tubes.

CARLOS ERNESTO SOSA PEREZ C, DAVID TRISTAN GAGO D, SOSA PEREZ C E, TRISTAN GAGO D, CARLOS ERNESTO SOSA PEREZ C E

Continuously or semi-continuously producing graphene by introducing particles comprising core into stationary deposition chamber and subjecting to plasma enhanced chemical vapor deposition using carbon-containing gas to form solid graphene.

BEUKES J A, HUANG F