国家/地区 中国（3） 美国（3） 日本（2） 韩国（2） 台湾（2） 世界知识产权组织（2）
IPC部 C（4） H（3）
IPC大类 C01（4） C23（4） H01（3）
IPC小类 C01B（4）
IPC C01B032/186（4）
发明人
公开年 2021（4）
申请年 2021（4）
专利权人

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K

Formation of graphene layer used as material in e.g. flexible technologies, involves forming polymer layer on catalytic substrate by chemical vapor deposition of graphene precursor, and raising temperature to induce cyclodehydrogenation.

SINITSKII A, TORRES A, LI G

Preparing neodymium-graphene composite material used as electrode material in electrolytic water hydrogen production device or as cathode material in fuel cell or metal-air battery, comprises preparing neodymium simple substance on graphene.

SA G, CHEN L, LIANG T, DENG Y, SAGAR R U R