国家/地区 日本（3） 韩国（3） 美国（3）
IPC部 C（3）
IPC大类 C01（3） H01（3） H05（2）
IPC小类 C01B（3）
IPC H01J037/32（3）
发明人 IFUKU R（2） MATSUMOTO T（2）
公开年
申请年
专利权人 TOKYO ELECTRON LTD（3）

Upper electrode assembly used in plasma processing apparatus, has heat transfer sheet that is mounted between electrode plate and metal plate and having vertically oriented portion with vertically oriented graphene structures.

TSUJIMOTO H, KOBUNE T, LI L, LEE L, KOBUNEDAKAKI

Film forming by cleaning interior of treatment container, extracting and removing oxygen inside treatment container, introducing substrate into treatment container, and forming carbon film on substrate by plasma chemical vapor deposition.

MAKOTO W, TAKASHI M, NOBUTAKE K, RYOTA I, MASAHITO S, HIROKAZU U, MATSUMOTO T, KABURAGI N, IFUKU R, SUGIURA M, UEDA H, WADA M, KABUKI N

Anisotropic etching of graphene used as electronic material, involves generating hydrogen plasma using microwave plasma, and anisotropically etching graphene using generated hydrogen plasma.

IFUKU R, MATSUMOTO T