国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（3） H01（3）
IPC小类 C01B（3）
IPC C01B031/04（3）
发明人
公开年 2015（2）
申请年 2014（3）
专利权人

Electrical device e.g. photodetector, has multi-layer graphene structure for laterally contacting single-layer graphene part, and graphite part in contact with surface of multi-layer graphene structure.

RUHL G, FOERG R

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Preparation of patterned graphene used for preparing photoelectronic device, comprises uniformly coating solid carbon source on a substance provided with a catalyst and forming high graphic pattern by high-temperature reaction.

HU H, HU L, LI F, YE Y, ZHANG Y, GUO T, WU C, ZHOU X, LIN M