国家/地区 中国（5）
IPC部 C（5）
IPC大类 C01（5） H01（5）
IPC小类 C01B（5）
IPC H01L021/02（5）
发明人
公开年 2017（3） 2018（2）
申请年 2017（5）
专利权人

Semiconductor device comprises substrate comprising insulator and semiconductor comprising group IV material and/or group III-V compound, and graphene layer grown on surface of semiconductor.

SHIN K, SHIN H, CHO Y, NAM S, PARK S, LEE Y, SHIN K W, SHIN H J, CHO Y C, NAM S G, PARK S J, LEE Y S

Controllable step-shape pre-treatment of silicon carbide substrate useful in pyroletic preparation of graphene, comprises placing the cleaned silicon carbide substrate on a susceptor in a chemical vapor deposition CVD apparatus, and heating.

ZHAO Z, LI Y, WANG Y, LI Z

Method for transferring graphene from surface of substrate to other substrate, involves affixing growth substrate onto surface of transitory substrate, delaminating graphene layer from substrate, and transferring layer onto target surface.

LERNER M, PAN D, GOLDSMITH B, AFSAHI S J

Preparing large-area regular epitaxial graphene doped with metal atoms comprises e.g. taking monocrystal silicon carbide substrate as growth substrate, heating the monocrystal silicon carbide sample and degassing.

HU T, MA F, XU K, MA D, LIU X, ZHANG X

Growing patterned graphene on electrode surface by placing substrate with electrode in carbon source, irradiating surface of electrode with laser light and growing graphene film layer on electrode surface at irradiation site.

CHEN G, GUO T, CHEN H, HU H, YE Y