国家/地区 中国（42） 世界知识产权组织（2）
IPC部 C（42）
IPC大类 C01（42） B82（3） C08（3）
B01（2） H01（2）
IPC小类 C01B（42）
IPC C01B031/04（42） C01B032/184（4） C01B032/194（3）
B82Y030/00（2） C01B032/186（2） C08G016/02（2）
C08K003/04（2）
发明人 LIU Z（42）
公开年 2015（20） 2014（16） 2016（6）
申请年 2014（42）
专利权人 CHINESE ACAD.（12） ZHEJIANG TAN.（9） NINGBO INST .（6） CHANGZHOU ER.（5）
ZHEJIANG TAN.（5） CHANGZHOU 2D.（4） JINAN SHENGQ.（4） SINOPEC CORP（4）
SINOPEC SHAN.（4） NINGBO MORSH.（3）

Production of sulfur-doped graphene, used in industrial field, involves carrying out ultrasonic peeling of graphite oxide in solvent and obtaining graphene oxide solution which is mixed with sulfur-containing organic compounds.

GAO H, JIA Y, LIU Z, SHI Z, WANG C

Synthesizing sulfur-doped graphene comprises ultrasonically peeling the graphite oxide in a solvent, mixing the graphene oxide solution and sulfur-containing organic compounds with ultrasonicating, dispersing and uniformly mixing.

GAO H, JIA Y, LIU Z, SHI Z, WANG C

Preparation of sulfur-doped graphene, involves mixing graphite oxide in water, obtaining graphene oxide solution, mixing with sulfur-containing compounds, ultrasonically processing, mixing, and hydrothermally reacting.

GAO H, JIA Y, LIU Z, SHI Z, WANG C

Synthesis of sulfur-doped graphene comprises taking graphite oxide in water, ultrasonically peeling off, freeze-drying, mixing with hydrogen sulfide and inert gas, and reacting.

GAO H, JIA Y, LIU Z, SHI Z, WANG C

Graphene growing device has transmission mechanism is provided with conveyor belt, and high temperature resistance rollers which are provided in preheat device and deposition device.

LIU Z, YANG H, ZHANG Z, ZHANG W, ZHANG X, ZHOU Z, DENG K

Quick graphene preparation device includes tubular furnace quartz pipe, sample loading cabin, vacuum valve, heating device, first and second air inlets and outlets, sample loading opening, shifting device, and multiple sample loading boats.

LIU Z, YANG H, ZHANG Z, ZHANG W, ZHANG X, ZHOU Z, DENG K

Device for producing large area graphene used for e.g. transistor, has metal substrate whose two sides are provided with small holes, and fixing device provided with fixed wire connected through small holes of metal substrate.

JIN H, LIU Z, SHI M, ZHANG Z, ZHANG X, DENG K

Preparing graphene thin films comprises processing copper foil blank and growing graphene films on copper foil where processing copper foil blank includes e.g. cleaning copper foil blank plasma, decontaminating and treating with oxide layer.

JIN H, LIU Z, QI X, PENG P, YANG H, ZHANG Z, ZHANG W, ZHANG X, DENG K

Preparation of graphene involves heating metal substrate in reaction chamber, supplying gas mixture of oxygen and inert gas to reaction chamber, feeding mixed gas of hydrogen and inert gas and supplying hydrogen and carbon source.

JIN H, LIU Z, PENG P, ZHANG Z, ZHANG W, ZHOU Z

Preparing graphene powder involves mixing graphite oxide and dispersant to give intermediate product, where the dispersing agent comprises ammonium salt.

HU J, LIU Z, QIN Z, ZHOU X