国家/地区 中国（3） 澳大利亚（2） 台湾（2） 世界知识产权组织（2）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B032/192（2） C01B032/198（2） C01B032/20（2）
发明人 LIN H（6）
公开年 2018（6）
申请年 2017（6）
专利权人 HENAN GRAPHE.（2） HENAN GRAPHE.（2） UNIV SWINBUR.（2）

Device for producing graphene and method thereof capable of producing graphene at a high speed.

SONG J, LIU J, WANG G, WANG H, WANG S, ZANG P, LIN Y, LIN H

Device for producing graphene, has procesed mixed slurry comprising graphite and surfactant, received mixed slurry in accommodating groove, pressurizing unit is communicating with accommodating groove, provided pushing force.

SONG J, LIU J, WANG S, WANG H, ZANG B, LIN Y, LIN H

Method for producing large-area graphene, involves lowering penetrating rate continuously, so that carbon source penetrating substrate forms re-crystallization and precipitates.

SONG J, LIU J, WANG S, WANG H, ZANG B, LIN Y, LIN H

Large-area graphene and manufacturing method thereof capable of obtaining graphene having a diameter value between 1 less than mu greater than m and 50 less than mu greater than m obtained by a Raman spectroscopy.

SONG J, LIU J, WANG G, WANG H, WANG S, ZANG P, LIN Y, LIN H

Process for preparing porous graphene-based film, involves separating reduced graphene oxide sheet having pore of different size is separated from sheet overlapping by different interlayer distance.

LIN H, JIA B

Manufacturing method of capacitors, supercapacitors, and electrodes, involves irradiating graphene oxide with beam of light or radiation to form reduced graphene oxide in three-dimensional pattern.

LIN H, JIA B