国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（3） B82（2）
IPC小类 C01B（3）
IPC C01B031/04（3）
发明人 LIN S（3）
公开年 2013（3）
申请年 2013（3） 
专利权人 HANGZHOU GEL.（2）

Preparation of graphene film involves subjecting non-metallic substrate in oxygen plasma cleaning machine, sending non-metallic substrate into vacuum reaction furnace, adding hydrogen, heat preserving, and placing substrate in quartz glass.

LI P, BAO Q, CHEN C, XU M, YUAN J, LIN S

Preparation of fluorinated graphene using atomic layer deposition device used for, e.g. electronic device by etching copper foil with graphene using corrosive solution, transferring in substrate, washing and reacting with fluorinating agent.

DONG C, LIN S

Chemical vapor deposition method for preparing dual-layer graphene involves regulating flow of carbon source gas and pressure intensity of reaction chamber under atmosphere of reductive gas and inert gas, and growing graphene film.

DONG C, LIN S