国家/地区 中国（4）
IPC部 C（4）
IPC大类 C01（4） B82（2）
IPC小类 C01B（4）
IPC C01B032/184（4）
发明人 LIN S（4）
公开年 2017（4）
申请年 2017（4） 
专利权人 HANGZHOU GEL.（2）

Preparing graphite quantum dot by sugar precursor at low temperature comprises e.g. mixing sugar monomer in alkaline aqueous solution, reacting to obtain graphene quantum dot mother liquor, dialyzing or filtering and spray.

LU H, ZHANG J, CHEN Y, PAN Y, LIN S

Preparing doped metal oxide/graphene composition nano material comprises e.g. preparing graphene oxide aqueous solution by improved Hummers method, carrying out centrifugal washing, taking metal ion salt, urea and dispersing ultrasonically.

LI Q, PAN Q, LIN S, JU X, WANG T

Preparing germanium-doped graphene material for for quantum light source, involves placing germanium source and carbon source in reaction furnace tube, introducing into protective atmosphere and reacting for under protective atmosphere.

LIN S

Preparation graphene doped with nitrogen comprises mixing carbon source and indigo in dispersion solvent, drying solution, mixing, raising temperature, carrying out heat preservation, and cooling to room temperature.

LIN S