国家/地区 中国（7）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B032/186（2） C01B032/192（2） C01B032/198（2）
发明人 WEI C（7）
公开年 2017（7）
申请年 2017（5） 
专利权人 SHANDONG JIN.（3） 13TH RES INS.（2）

Preparation of low-fold density graphene material involves taking insulating substrate, cleaning, drying, putting into chemical vapor deposition equipment, vacuumizing, turning on the microwave power, heating and reacting.

LIU Q, WEI C, HE Z, WANG J, GUO J, ZHOU C, FENG Z

Preparing hydroxylated graphene comprises e.g. preparing oxidized graphite, then treating graphene oxide with high-power ultrasonic stripping apparatus, then subjecting liquid crystal to low-temperature supercritical pressure peeling.

ZHANG Z, ZHANG M, MOU Y, LI X, WEI C, YU W, MU Y

Preparation of graphene oxide, involves dripping microcrystalline graphite to reaction vessel containing sulfuric acid, adding oxidant under ice bath condition, stirring, placing mixed system in water bath, and dripping deionized water.

HU K, ZHANG M, MOU Y, WEI C, SONG Y, YU W

Industrial grade device used for purifying graphene oxide solution comprises membrane filtration unit, conduit, air pressure pipeline, material inlet and outlet.

WEI C, ZHANG M, HU K, MOU Y, ZHANG Z, LI X

Preparation of nanocrystalline graphene on sapphire substrate, involves placing sapphire substrate in graphene plasma-enhanced chemical vapor deposition equipment, introducing inert gas, pretreating substrate in hydrogen atmosphere.

WEI C, FENG Z, LIU Q, HE Z, WANG J, SONG X, ZHOU C

Preparing nitrated graphene comprises e.g. carrying out oxidation of graphite into graphene oxide using Hummers method, peeling nitrified graphite in deionized water and freeze-drying nitrated graphene deionized aqueous solution.

MOU Y, QU L, SONG Y, WEI C, YU W, ZHANG M, ZHANG Z, ZHENG G

Manufacturing negative plate of secondary battery, involves providing multiple sheets of functional graphene, and compressing functional graphene to faun graphene target.

HUANG C, CHIU S, CHU C, CHUANG Y, WANG C, WEI C, HUANG J, QIU S, ZHU J, ZHUANG Y, WANG Z, WEI J, WANG J