国家/地区 美国（4） 韩国（3）
IPC部 B（4）
IPC大类 C01（4） B05（3） B32（3）
B82（2） H01（2） H05（2）
IPC小类 C01B（4）
IPC C01B031/00（4）
发明人 SHIN H（4）
公开年 2009（2）
申请年 2008（2） 
专利权人 SAMSUNG ELEC.（4）

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H

Preparing a graphene shell, comprises forming graphitizing catalyst in three-dimensional form, forming a coating on the graphitizing catalyst, and heat-treating the coating on the graphitizing catalyst in an inert or reductive atmosphere.

CHOI J, SHIN H, YOON S

Preparing graphene shell comprises performing first heat treatment on a mixture of organic solvent and graphitization catalyst to carburize the catalyst, and forming the shells on surfaces of carburized catalyst by second heat treatment.

CHOI J, SHIN H, YOON S, IN Z, CHOI J Y, SHIN H J, YOON S M

Graphene pattern for electromagnetic element, has graphene with layers, which is polycyclic aromatic molecule formed by covalent bond of carbon atoms with one other, is formed in pattern layout on at least one side of base plate.

CHOI J Y, SHIN H J, YOON S M, CHOI J, SHIN H, YOON S