国家/地区 美国（5） 世界知识产权组织（4） 中国（3） 欧洲专利局（EPO）（3） 日本（3） 韩国（3） 印度（2） 墨西哥（2）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B031/00（6）
发明人
公开年 2011（6）
申请年 2010（4）  2011（2） 
专利权人

Composition, useful in e.g. high speed transistors, electronic devices, sensors, solar cells, optoelectronic devices, logic devices, ultra capacitors, and actuators, comprises unaffixed graphene particulates.

BERRY V, MOHANTY N, MOORE D S

Doped, at least partially saturated graphene, useful in electronic devices including transistors, and as conductors including microcircuits or bulk conductors.

GIUSTINO F, FERRARI A C, SAVINI G

Method for manufacturing graphene that is utilized in e.g. semiconductor, involves mixing organic compound and graphite with reaction medium containing poly phosphate and phosphorus pentoxide.

CHOI E K, JEON I Y, BAE S Y, BAEK J B

Nanocomposite material, useful to produce electronic device and/or structural material, comprises a substrate, optionally functionalized graphene, optional adhesive component to adhere graphene to substrate and an optional protective layer.

KINLOCH I A, YOUNG R J, NOVOSELOV K S

Producing nano-scaled graphene platelet, useful in thermoplastic polymer nanocomposite composition, comprises contacting graphite material with molecular/atomic oxygen to obtain precursor, and chemically or physically reducing the precursor.

FELISARI R, VALENTINO O, CASALINI A

Producing graphene oxide involves mixing graphite source with solution containing oxidant and protecting agent, and oxidizing the graphite source with the oxidant in presence of the protecting agent to form graphene oxide.

TOUR J M, KOSYNKIN D V, TOUR J, KOSYNKIN D