国家/地区 美国（4） 德国（2） 英国（2）
IPC部 C（4）
IPC大类 C01（4） B05（3） B82（3）
H01（3） B32（2）
IPC小类 C01B（4）
IPC C01B031/04（4）
发明人 BOL A A（4）
公开年 2013（2）
申请年 2012（2） 
专利权人 INT BUSINESS.（4）

Semiconductor device i.e. graphene FET, has graphene layer formed on doped semiconductor substrate and contacts and for serving channel layer for FET, where doped semiconductor substrate serves as back gate for FET.

BOL A A, FRANKLIN A D, HAN S

Forming cleaned nanotube-graphene hybrid thin film on a substrate, comprises depositing the nanotube thin-film over a substrate to produce a layer of nanotube thin-film, and removing impurities from surface of layer of nanotube thin-film.

BOL A A, CHANDRA B, KASRY A, MAAROUF A, MARTYNA G J, TULEVSKI G S

Increasing conductivity of a graphene film, comprises exposing the graphene sheets to a solution comprising a one-electron oxidant configured to dope the graphene sheets.

BOL A A, AFZALIARDAKANI A, TULEVSKI G S, AFZALIARDAKANI A

Method for forming graphene layer e.g. few-layer graphene, for high frequency low-noise amplifier for communication application, involves using carbon in layer to pass via another layer to upper surface and forming graphene layer on surface.

BOL A A, CARRUTHERS R A, CHU J O, GRILL A, LAVOIE C, SAENGER K L, TSANG J C