国家/地区 中国（4） 日本（2）
IPC部 B（6）
IPC大类 B32（6）
IPC小类 B32B（6）
IPC C01B032/186（6）
发明人 CHEN Q（2） DUAN Y（2） GONG M（2）
LI Y（2） LI Z（2） LIANG J（2）
LIU B（2） PEI Z（2） SHAO L（2）
SHI H（2） WANG Y（2） YANG W（2）
ZHANG X（2） ZHANG Y（2）
公开年 2022（6）
申请年 2022（4）  2021（2） 
专利权人 CHINESE ACAD.（2） CHONGQING GR.（2） CRRC IND RES.（2）

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Graphene laminate comprises substrate having insulating surface, intermediate layer located on and in contact with substrate, and graphene film located on intermediate layer and in contact with intermediate layer.

OKIGAWA Y, YAMADA T

Scale production device of high conductive graphene metal composite material, has sealing chamber that is provided with feeding area and high temperature area provided with heating mechanism, pressing mechanism and transport mechanism.

SHAO L, DUAN Y, SHI H, LI Z, ZHANG Y

Preparing graphene copper composite material useful in supercapacitors and motor drive devices, comprises e.g. pre-setting multi-layer copper foil in hot pressing chamber, adopting chemical vapor deposition, preparing graphene film on copper foil surface, and sintering graphene-copper.

GONG M, ZHAO M, LI M, CHEN C, CHEN Q, YANG W, LI Y, WANG Y, LIU B, PEI Z, ZHANG X, LIANG J

Producing graphene metal layered complex material useful in e.g. aviation and space comprises stacking number of metal base material separated by interlayer material in sealing chamber, growing graphene on metal base material, stacking graphene metal complex materials, and hot pressing.

SHAO L, DUAN Y, SHI H, LI Z, ZHANG Y

Composite material used for improving electroconductivity of metal, has graphene fragment layer that comprises graphene fragments uniformly spread on metal foil layer.

GONG M, SUN B, WANG Y, CHEN Q, YANG W, LI Y, LIANG J, LIU B, ZHANG X, PEI Z