国家/地区 中国（3） 欧洲专利局（EPO）（2） 日本（2） 韩国（2） 美国（2） 世界知识产权组织（2）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B032/196（4）
发明人
公开年
申请年
专利权人

Purifying graphene film by providing graphene film, protective gas, hydrogen and carbon source in mixed atmosphere, etching defect positions of graphene film, and growing graphene on etched area through chemical vapor deposition reaction.

ZOU D, ZHOU Z, ZHAO Y, YU D

Cleaning method of graphene comprises rolling the surface of graphene through curved body provided with adsorbent on curved surface.

LIU Z, PENG H, SUN L, LI Y, LIU X, LIN L, ZHANG J, JIA K

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Producing graphene, comprises introducing a solution of a metal alkoxide in a solvent into a decomposition apparatus, which includes a first region having a high temperature to cause thermal decomposition of the metal alkoxide.

COLEMAN K S