国家/地区 韩国（7） 美国（7） 日本（3） 世界知识产权组织（3） 中国（2）
IPC部 C（7）
IPC大类 C01（7） C23（7） B32（4）
H01（4） B82（3）
IPC小类 C01B（7）
IPC C23C016/26（7）
发明人 HONG B H（7） AHN J（2） AHN J H（2）
HAN J H（2） HONG B（2）
公开年 2012（3）
申请年 2011（2）  2012（2）  2015（2） 
专利权人 GRAPHENE SQUARE INC（7）

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Graphene film manufacturing device comprises wrinkles flattening device, base substrate, graphene film, porous adsorption member, hollow space and vacuum suction port.

WAN S K, HEE H J, HEE H B, KIM W S, HAN J H, HONG B H

Manufacture of graphene involves irradiating near-infrared ray to chamber containing metallic catalyst and carbon source, reacting metallic catalyst and carbon source, and growing graphene on surface of metallic catalyst.

HONG B H, HAN J H, HAN D H, CHOI W T, KIM J D

Stable graphene film for graphene transparent electrode for touch screen, comprises graphene film and conductive protective film.

AHN J H, HONG B H, YAN C, AHN J

Method for n-doping of graphene for use in e.g. sensor, involves growing graphene on substrate by supplying reaction gas containing carbon source, heating and doping using n-type dopant or vapor containing n-type dopant.

HONG B H, KIM E S, KIM E, HONG B

Graphene transferring method, involves adhering heat exfoliation sheet with target substrate, and pressurizing heat exfoliation sheet pressurized with graphene according to atmospheric condition.

HONG B H, CHOI J, KIM Y, KIM K S, KANG J, KIM H, CHOI J B

Manufacture of graphene used for forming graphene sheet, involves supplying carbon source-containing gas to metal catalyst layer for graphene growth, and forming graphene by inductively coupled plasma-chemical vapor deposition.

AHN J, BAE S K, HONG B H, JANG H, JUNG M H, KIM S J, LEE Y, YOO J B, AHN J H, LIU Z, BAE S, HONG B, LI R, JUNG M, KIM S