国家/地区 世界知识产权组织（3） 韩国（2） 美国（2）
IPC部 B（3）
IPC大类 B44（3）
IPC小类 B44C（3）
IPC C23C016/26（3）
发明人
公开年 2013（3）
申请年 2012（2） 
专利权人

Manufacture of graphene for top-gate FETs, involves forming graphene layer on base substrate, attaching target substrate onto layer, and separating graphene layer from base substrate to transfer graphene layer onto target substrate.

CHO B, KIM T, SHIN W, YOON T, BYUNG J C, TAE S Y, TAEK S K, WOO C S

Method for manufacturing laminate of graphene to produce e.g. electronic device product, involves providing target substrate to form first composite comprising target substrate, and removing of first composite from growth substrate.

HAQUE S M, WHITE R, BOWER C, HAQUE S

Manufacture of graphene for, e.g. organic LEDs, involves preparing structure with graphene on surfaces and catalyst, arranging carriers on graphene, and removing catalyst while winding up carriers by rotating rolls facing each other.

KIM N, RYU J, YEONG K N, CHEOL R J, KIM N Y, RYU J C