国家/地区 美国（13） 韩国（10） 世界知识产权组织（9） 中国（5） 欧洲专利局（EPO）（4） 日本（4）
IPC部 B（15）
IPC大类 B01（15）
IPC小类 C01B（15）
IPC C01B031/02（15）
发明人 ABDELSAYED V（2） ALOTHMAN Z A M（2） ELSHALL M S（2）
SEO D（2）
公开年 2011（15）
申请年 2010（7）  2011（6）  2009（2） 
专利权人 UNIV SUNGKYU.（3） ABDELSAYED V（2） ALOTHMAN Z A.（2） ELSHALL M S（2）
SAMSUNG ELEC.（2） UNIV VIRGINI.（2）

Manufacture of graphene involves using face centered cubic metal catalyst with single oriented texture.

CHA S W, HONG B H, HONG S Y, JUNG M H, KIM K E, KIM K H, MAENG K S, PARK C W, PARK S B

Forming graphene used in e.g. bioanalytics involves providing graphite sample having atomic layers of carbon; introducing solvent and ions into spaces between the atomic layers; expanding space; and separating the layers using driving force.

LOH K P, WANG J, JUNZHONG B, LOH K, LUO J, ZUNZHONG W

Forming graphene nano ribbon used in display device involves depositing graphene sheet on surface of substrate, forming plasma mask with nano pattern on sheet, and forming nano pattern in sheet by plasma treating stack structure having mask.

SHIN H, CHOI J, LEE Y, HAN G, CHOI J Y, HAN G H, LEE Y H, SHIN H J

Producing graphene, useful for catalyzing chemical cross-coupling of at least two reactants of interest, comprises irradiating solid graphite oxide or a solution of graphite oxide with microwave radiation.

ELSHALL M S, ABDELSAYED V, HASSAN H M A, KHDER A E R S, ABOUZELD K M, DAI Q, AFSHANI P, GUPTON F, SIAMAKI A R, ALOTHMAN Z A M, ALKHATHLAN H Z, ABOUZEID K M

Producing graphene, useful in spintronic device, comprises spacing source of silicon from silicon carbide substrate in pressure vessel, reducing pressure to vacuum and heating silicon source to evaporate silicon and heating the substrate.

LANZARA A, SCHMID A K, YU X, HWANG C, KOHL A, JOZWIAK C M

Method for manufacturing carbon material for laminated product, involves placing carbon atom in graphene layer, forming polymer layer in graphene layer, stabilizing atom, carbonizing polymer layer, and coating solution on polymer layer.

JO H I, LEE S H, KU B C, KIM J K, KIM T W, HWANG S Y

Reducing agent used for manufacturing reduced graphene oxide for, e.g. semiconductors, comprises reducing agent with halogen element, preferably hydrogen iodide, and acid, with acidity of acid being weaker than that of reducing agent.

LEE H Y, LEE J H, MOON I K

Manufacture of graphene involves obtaining forming graphite intercalation compound using alkaline metal or its ion, or alkaline earth metal or its ion, and dispersing graphite intercalation compound.

JEON S, KANG K, KWON J, PARK K, SEO D, JEON S W, KANG K S, KWON J Y, PARK K H, SEO D H, HWA S D, SEOK G G, YEONG K J, U JEON S

Manufacture of graphene used for e.g. photovoltaic cell, involves exposing graphite oxide to source of ultraviolet light, visible light and/or infrared radiant energy.

ELSHALL M S, ABDELSAYED V, ALRESAYES S I, ALOTHMAN Z A M, MOUSSA S, MOHAMED M B

Solid acid e.g. used for proton conducting membrane contains oxidation graphite and/or oxidation graphene with specified thickness.

KAWAHARA Y, FUJII K