国家/地区 中国（4）
IPC部 C（4）
IPC大类 C01（4） H01（3） B82（2）
IPC小类 C01B（4）
IPC C01B031/04（4） H01L021/02（3） B82Y040/00（2）
C01B031/02（2） H01L021/324（2） H01L021/768（2）
H01L029/16（2）
发明人 RUHL G（2） RUHR G（2）
公开年 2016（4）
申请年 2015（4）
专利权人 INFINEON TEC.（2）

Forming graphene structure, comprises forming body with protrusion and forming graphene layer at protrusion outer peripheral surface, or forming cylindrical opening in body and forming graphene layer at inner peripheral surface of opening.

IRSIGLER P, RUHL G, SCHULZE H, SHULZ H, RUHR G, ILSGLLE P

Manufacture of graphene platelets involves providing graphite blocks between every two graphene layers, introducing forward airflow and reverse airflow into chamber, and applying shear airflow to graphite block.

LIN Y, TSAI C, LEE T, CAI Q, LI T

Method for processing substrate used in manufacture of e.g. electronic devices, involves forming graphene layer from specific layer on surface of carrier by temperature treatment.

PRUEGL K, RUHL G, RUHR G, PRUGER K

Capacitor for semiconductor device, has dielectric sheet arranged over first graphene structure, and second graphene structure provided on dielectric sheet and comprising multiple graphene layers.

JOU C, KO C, CHIU P, CHENG C, LU C, CHEN H, HSUEH F, HUANG C, JOU C P, KO C H, CHIU P W, CHENG C C, LU C C, HUANG C F, CHEN H N, HSUEH F L, HUANG Q, KE Z, QIU B, XUE F, ZHOU C, ZHENG Z, LV Z, WANN C H