国家/地区 美国（3） 韩国（2）
IPC部 B（3）
IPC大类 B32（3）
IPC小类 B32B（3）
IPC C01B031/00（3）
发明人 SHIN H（3）
公开年
申请年
专利权人 SAMSUNG ELEC.（3）

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H

Preparing a graphene shell, comprises forming graphitizing catalyst in three-dimensional form, forming a coating on the graphitizing catalyst, and heat-treating the coating on the graphitizing catalyst in an inert or reductive atmosphere.

CHOI J, SHIN H, YOON S

Graphene pattern for electromagnetic element, has graphene with layers, which is polycyclic aromatic molecule formed by covalent bond of carbon atoms with one other, is formed in pattern layout on at least one side of base plate.

CHOI J Y, SHIN H J, YOON S M, CHOI J, SHIN H, YOON S