国家/地区 美国（3）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B031/04（3）
发明人 MAAROUF A（3）
公开年 2013（2）
申请年
专利权人 EGYPT NANOTE.（3） INT BUSINESS.（3） MAAROUF A（2） MARTYNA G J（2）

Doped, passivated graphene nanomesh used in field effect transistor, and semiconductor device, comprises graphene nanomesh comprising nanoholes, passivating element, and dopant bonded to passivating element.

ABOUKANDIL A, MAAROUF A, MARTYNA G J, MOHAMED H, NEWNS D M

Forming cleaned nanotube-graphene hybrid thin film on a substrate, comprises depositing the nanotube thin-film over a substrate to produce a layer of nanotube thin-film, and removing impurities from surface of layer of nanotube thin-film.

BOL A A, CHANDRA B, KASRY A, MAAROUF A, MARTYNA G J, TULEVSKI G S

Making a semiconductor device, comprises creating nanoholes in a graphene sheet to form a graphene nanomesh which includes carbon atoms, passivating a dangling bond on the carbon atoms, and doping the passivated graphene nanomesh.

ABOUKANDIL A, MAAROUF A, MARTYNA G J, MOHAMED H, NEWNS D M