国家/地区 美国（3）
IPC部 B（3）
IPC大类 B82（3）
IPC小类 B82Y（3）
IPC B82Y030/00（3） B82Y040/00（3） C01B031/04（3）
发明人 MAAROUF A（3）
公开年 2015（3）
申请年 2015（2） 
专利权人 INT BUSINESS.（3） EGYPT NANOTE.（2）

Method for forming patterned graphene layer on substrate of electronic device, involves removing patterned structure to produce patterned graphene layer on substrate, where patterned graphene layer on substrate provides carrier mobility.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K

Graphene nanomesh (GNM) based charge sensor for detecting a target molecule comprises a GNM with a patterned array of multiple holes each having a passivated edge functionalized with a chemical compound that facilitates chemical binding.

AFZALIARDAKANI A, HAN S, KASRY A, MAAROUF A, MARTYNA G J, NISTOR R, TSAI H

Doped, passivated graphene nanomesh used in field effect transistor, and semiconductor device, comprises graphene nanomesh comprising nanoholes, passivating element, and dopant bonded to passivating element.

ABOUKANDIL A, MAAROUF A, MARTYNA G J, MOHAMED H, NEWNS D M