国家/地区 美国（4）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC B82Y030/00（2） B82Y040/00（2） C01B031/02（2）
C01B031/04（2） C03C025/68（2） C23C016/26（2）
发明人 YAGER T A（2）
公开年 2012（4）
申请年 2011（3） 
专利权人 EMPIRE TECHN.（2） ISLAND GIANT.（2）

Method for transferring layer of graphene from transitional metal substrate onto target substrate, involves conforming layer of graphene to target substrate to form graphene on substrate assembly by applying hydrostatic pressure.

YAGER T A

Method for preparing patterned graphene film, involves soaking substrate in acetone or photoresist peeling solution to remove photoresist or poly(methyl methacrylate) on graphene film to obtain patterned graphene film.

DAI T, YAO Q, ZHANG F

Removing a single graphene layer from a graphene material comprises applying a metal to a surface of the graphene material, and applying a hydrogen containing solution to the surface of the graphene material.

TOUR J M, DIMIEV A M, KOSYNKIN D V

Forming recrystallized metal layer for growing graphene monolayer involves forming metal layer on substrate; forming layer of dielectric material on the metal layer; and directionally recrystallizing the metal layer.

YAGER T A