国家/地区 中国（4） 美国（2）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C23C016/26（6）
发明人 ZHANG L（6）
公开年 2023（2）
申请年 2022（3） 
专利权人

Graphene carbide/silicon carbide composite material used in electromagnetic shielding device, comprises multiple graphene of silicon carbide crystal grains uniformly distributed to form thin film.

LI Z, ZHANG L, TU R, XU Q, ZHANG S

Producing coated nano-ordered carbon particles used in anode within rechargeable battery including sodium-ion batteries and other metal-ion batteries, involve exposing carbon-containing material to expanding agent to produce expanded carbonaceous particles during expanding process.

ENTERKIN J A, WORFOLK B J, ZHANG L

Preparation of graphene/molybdenum disulfide heterojunction semiconductor film comprises cleaning copper foil substrate and silicon dioxide/silicon substrate, growing molybdenum-disulfide film and depositing graphene thin membrane.

ZHANG L

Vertical graphene composite heat conducting copper foil comprises copper foil substrate layer adhered with two plane graphene layers at surface and bottom, where surfaces of plane graphene layers have vertical graphene layers.

ZHANG L, YE Q, WANG X, SHEN L

Method for growing graphene layer on metal foil for e.g. forming field-effect transistor, involves positioning foil in vessel placed in chamber, introducing hydrogen, annealing foil, introducing methane and depositing carbon on foil.

ZHOU C, ZHANG Y, ZHANG L

Manufacture of graphene film material involves growing graphene film on copper substrate, providing on silicon substrate, dissolving copper substrate in ferric nitrate solution, depositing graphene film, drying, cleaning and cooling.

ZHANG X, JIANG J, YU W, ZHANG L