国家/地区 中国（4）
IPC部 B（4） C（4）
IPC大类 B01（4）
IPC小类 B01J（4）
IPC B01J023/755（4）
发明人
公开年
申请年
专利权人 SAMSUNG ELEC.（2）

Manufacture of graphene for electric component, involves forming metal catalytic layer on substrate, introducing cover material on catalytic layer, and growing graphene on catalytic layer by carrying out chemical vapor deposition.

CHO K, BONG H, CHO K W

Synthesizing graphene, comprises loading catalyst metals into chamber, increasing sizes of grains of catalyst metals, raising temperature inside the chamber while providing vapor carbon source and forming graphene.

SONG Y, KIM H, HONG B, AHN J, AHN J H, HONG B H, KIM H K, SONG Y I

Fabricating graphene to fabricate FET, comprises forming alloy catalyst layer on substrate using sputtering method and/or evaporation method, and forming graphene layer on alloy catalyst layer by supplying hydrocarbon gas onto substrate.

WOO Y, SEO D, SEO S, CHUNG H, KANG S, HEO J, SEO S A, CHUNG H J, KANG S R, HEO J S, WOO Y S, JUNG H J, HUH J S, YEO R, XU D, HUH J, JUNG H

Preparing graphene sheet, useful in e.g. electrical device, comprises forming film comprising graphitizing catalyst, heat-treating gaseous carbon source in presence of the catalyst to form graphene, and cooling graphene to form sheet.

CHOI J, SHIN H, YOON S, CHOI J Y, SHIN H J, YOON S M, IN Z