国家/地区 美国（25） 中国（18） 世界知识产权组织（15） 日本（14） 韩国（12） 欧洲专利局（EPO）（8） 台湾（7） 西班牙（4）
IPC部 B（26）
IPC大类 B82（26）
IPC小类 B82Y（26）
IPC B82Y030/00（26）
发明人 FAN F Y（4） FAN S（4） JIANG K（4）
LIN X（4） XIAO L（4） HONG B（3）
HONG B H（3） LIN X Y（3） AHN J（2）
AHN J H（2） CHIBA G（2） CHIBA Y（2）
CHOI J（2） CHOI J Y（2） DING G（2）
公开年 2012（26）
申请年 2011（15）  2012（11） 
专利权人 HON HAI PREC.（4） HONGFUJIN PR.（4） UNIV TSINGHU.（4） SAMSUNG ELEC.（3）
CHINESE ACAD.（2） HANWHA TECHW.（2） JX NIPPON MI.（2） NIPPON MININ.（2）
NIPPON MININ.（2） SAMSUNG TECH.（2） SHANGHAI INS.（2） UNIV SUNGKYU.（2）
UNIV SUNGKYU.（2）

Method for non-destructively transferring graphene, involves nondestructively combining graphene coated with media with target substrate, and removing media to transfer graphene to target substrate nondestructively.

REN W, GAO L, MA L, CHENG H

Copper foil for manufacturing graphene, has specified sum total of oxides and sulfides having diameter of below preset value before heating under hydrogen and argon-containing atmosphere.

CHIBA Y, YAMAJI T, YOSHIHIRO C, TATSUYA Y, CHIBA G

Making a graphene or carbon nanotube composite structure, comprises e.g. growing graphene film on first surface of metal substrate by chemical vapor deposition method, and combining carbon nanotube film structure with graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making a graphene composite structure used as electrode involves growing a graphene film on the first surface of the metal substrate by a chemical vapor deposition method; and etching the metal substrate from the second surface.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making thermoacoustic element involves arranging graphene film on metal substrate/forming laminate structure by stacking nonmetal substrate on substrate/removing substrate from laminate structure/forming through-holes in nonmetal substrate.

JIANG K, LIN X, XIAO L, FAN S, IM H Y, FAN F Y

Making crystalline graphene, used e.g. in electronic device, comprises e.g. performing first thermal treatment by supplying heat to inorganic substrate, and introducing vapor carbon supply source into reactor during first thermal treatment.

SHIN H, CHOI J, WOO Y, YOON S, SHIN H J, CHOI J Y, WOO Y S, YOON S M

Making doped single graphene sheets involves oxidizing graphite to non-electrically conductive graphite oxide followed by exfoliating in solvent, depositing metal or metal oxides, and reducing to electrically conductive graphene sheets.

DO I, DRZAL L T, MONGA A

Forming multi-layer graphene involves forming stack of graphitizing metal catalyst layer and graphene by repeatedly forming the catalyst layer on substrate, and forming graphene on the catalyst layer; and removing the metal catalyst layer.

WOO Y, CHOI J, CHOI W, SHIN H, YOON S, WOO Y S, CHOI J Y, CHOI W M, SHIN H J, YOON S M

Ribbon of graphene, useful in FET structure and three/two terminal device structure, where ribbon of graphene provided with surface and arm chair edges is in physical contact with surface of single crystal substrate.

DIMITRAKOPOULOS C

Method for transferring layer of graphene from transitional metal substrate onto target substrate, involves conforming layer of graphene to target substrate to form graphene on substrate assembly by applying hydrostatic pressure.

YAGER T A