国家/地区 中国（2） 韩国（2） 美国（2） 世界知识产权组织（2）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C23C016/26（3）
发明人
公开年 2012（2）
申请年 2011（3）
专利权人

Manufacturing method of graphene for transparency electrode plate used in semiconductor device, involves forming amorphous carbon thin film in top surface of catalyst metal layer, and cooling thin film for forming graphene layer.

KIM C S, KIM J K, KIM D G, KANG J W

Manufacture of graphene nano belt for electric component, involves preparing single atom layer and forming layer on insulating substrate, and directly growing.

CHEN J, DING G, JIANG M, TANG S, WANG C, XIE X

Manufacture of graphene used for forming graphene sheet, involves supplying carbon source-containing gas to metal catalyst layer for graphene growth, and forming graphene by inductively coupled plasma-chemical vapor deposition.

AHN J, BAE S K, HONG B H, JANG H, JUNG M H, KIM S J, LEE Y, YOO J B, AHN J H, LIU Z, BAE S, HONG B, LI R, JUNG M, KIM S