国家/地区 韩国（2）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B031/02（3）
发明人
公开年 2013（3）
申请年 2012（2） 
专利权人

Plasma process apparatus used to process e.g. graphene used in the fabrication of transistor, comprises reactor comprising electrode portions to feed constant high voltage for plasma discharge reaction generated in processing channel.

KIM S, YONG D K, BYUNG G S, SUN Y C, MYOUNG S S, BYUNG H K, KYU H L, MOON W L

Manufacturing method of graphene for transparency electrode plate used in semiconductor device, involves forming amorphous carbon thin film in top surface of catalyst metal layer, and cooling thin film for forming graphene layer.

KIM C S, KIM J K, KIM D G, KANG J W

Producing graphene used as electronic materials and electrode materials, comprises contacting a carbon source substance with surface of flexible film-forming target, and applying a current to film-forming target and heating the target.

KOBAYASHI T, BANDO M, KIMURA N, SHIMIZU K, KADONO K, SUMINO K