国家/地区 中国（4）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C22C009/00（4）
发明人 DUAN Y（2） HUANG D（2） LI X（2）
LI Z（2） SHAO L（2） SHI H（2）
ZHANG Y（2）
公开年 2022（4）
申请年 2022（3） 
专利权人 CHINESE ACAD.（2） CHONGQING GR.（2）

Device for preparing high-conductivity graphene metal composite material, has gas circuit mechanism for introducing gaseous carbon source and auxiliary gas into sample chamber, plasma auxiliary decomposition chamber and hot-pressure chamber.

SHAO L, LI X, ZHANG Y, LI Z, DUAN Y, SHI H, HUANG D

Method for preparing graphene metal composite material useful in field of alloy preparation for electrical, mechanical, and thermodynamic applications, comprises e.g. growing graphene on surface of metal material, heating, and applying pressure to metal material grown with graphene.

QU Y, TAN H, WANG W, SHEN D

Preparing graphene metal layered composite material useful in aerospace industry, aviation industry and information industry, comprises pre-treating solid carbon source, growing graphene on many metal substrates and hot-pressing many graphene metal substrates.

SHAO L, LI X, ZHANG Y, LI Z, HUANG D, SHI H, DUAN Y

Method for Preparing oxidation resistant copper-based surface enhanced Raman scattering substrate, involves adding alloy strip into hydrochloric acid ethanol solution to remove alloy to obtain nano porous copper, carrying out acid washing on nano porous copper, and washing oxide layer off.

LIU J, NING J, ZHANG L, CHEN C, PAN D