国家/地区 中国（6）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C23C016/30（6）
发明人 ZHANG L（2）
公开年
申请年 2020（2）  2022（2） 
专利权人

Graphene carbide/silicon carbide composite material used in electromagnetic shielding device, comprises multiple graphene of silicon carbide crystal grains uniformly distributed to form thin film.

LI Z, ZHANG L, TU R, XU Q, ZHANG S

Preparation of graphene/molybdenum disulfide heterojunction semiconductor film comprises cleaning copper foil substrate and silicon dioxide/silicon substrate, growing molybdenum-disulfide film and depositing graphene thin membrane.

ZHANG L

Applying functional compound on sulfur particles for forming treated sulfur particles, involves using coating composition containing inorganic electroconductive compound, electroconductive carbon compound and organic precursor compound.

HAVERMANS D, SALLARD S, SHAFIQUE A, VANGENEUGDEN D, VANHULSEL A, HARDY A, SALAH S, SHAFIK A, VAN GENUGDEN D, HARDY N

Preparing molybdenum disulfide/graphene two-dimensional material hetero junction visible light catalyst, comprises e.g. preparing single layer uniform graphene on surface of copper foil, and growing molybdenum disulfide on graphene surface.

CHENG L, ZHENG H, XU W, WANG S

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

New graphene comprising a structure of carbon atoms partially substituted with boron atoms and nitrogen atoms, where the graphene has a band gap, useful in a channel of a transistor.

LEE S, SEO S, WOO Y, CHUNG H, HEO J, LEE S H, SEO S A, WOO Y S, CHUNG H J, HEO J S, HUN L S