国家/地区 韩国（5） 日本（3） 美国（3） 中国（2） 世界知识产权组织（2）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C23C016/26（5）
发明人
公开年 2021（5）
申请年 2019（2）  2021（2） 
专利权人 UNIV SINGAPO.（2）

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Film forming by cleaning interior of treatment container, extracting and removing oxygen inside treatment container, introducing substrate into treatment container, and forming carbon film on substrate by plasma chemical vapor deposition.

MAKOTO W, TAKASHI M, NOBUTAKE K, RYOTA I, MASAHITO S, HIROKAZU U, MATSUMOTO T, KABURAGI N, IFUKU R, SUGIURA M, UEDA H, WADA M, KABUKI N

Core-shell structure useful in anode material for secondary batteries comprises metal core, and shell which is graphene.

CHOI H Y, PARK J W, EUGENE L, DOH C H, BAE Y

Silicon-carbon composites in anode active material for secondary battery comprises core-shell structure comprising e.g. core comprising silicon-containing constituent with silicon crystal and first carbon and shell comprising second carbon.

OH S M, PARK J G, LIM J