国家/地区 日本（4）
IPC部 B（4） C（4） H（2）
IPC大类 B82（4）
IPC小类 B82Y（4）
IPC B82Y040/00（4） C01B031/02（4） B82Y030/00（3）
C01B031/04（2）
发明人
公开年 2011（4）
申请年 2011（4）
专利权人 SAMSUNG ELEC.（2）

New graphene comprising a structure of carbon atoms partially substituted with boron atoms and nitrogen atoms, where the graphene has a band gap, useful in a channel of a transistor.

LEE S, SEO S, WOO Y, CHUNG H, HEO J, LEE S H, SEO S A, WOO Y S, CHUNG H J, HEO J S, HUN L S

Resin plating comprises forming a graphene thin layer on a resin substrate and electroplating the resin substrate having the graphene thin layer formed on it.

BAE A H, SON S I, NAM J D, LEE J H, HWANG T S, OH J S, LEE H, EAH H B, SANG I S, JAE D N, JOON S O, JUN H L, TAE S H, HWANG T, LEE J, NAN J, PAE A, SUN S, OU J

Carbon-film laminate used for graphene-based electronic device, has monocrystal substrate, copper single-crystal thin film epitaxially grown on substrate, and graphene formed on copper single-crystal thin film.

HASEGAWA MASATAKA, ISHIHARA MASATOU, KOGA YOSHINORI, KIM JAEHO, TSUGAWA KAZUO, IIJIMA SUMIO, HASEGAWA M, ISHIHARA M, KOGA Y, KIM J, TSUGAWA K, IIJIMA S, YOSHINORI K, HO K J, KAZUO T, SUMIO I, MASATAKA H, MASATOU I, JAEHO K

Manufacture of graphene fiber used for e.g. coaxial cable, involves forming linear pattern on substrate having metal layer, reacting linear pattern having metal layer with reactive gas, and impregnating substrate with linear pattern.

BAE S K, HONG B H, KIM H K, KIM K S, HUI H B, SU K G, GEUN K H, GANG B S