国家/地区 韩国（3）
IPC部 C（3） B（2）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B031/02（3） C23C016/26（2） C23C016/46（2）
发明人 WON D（3）
公开年 2012（3）
申请年 2011（2） 
专利权人 HANWHA TECHW.（3） SAMSUNG TECH.（3）

Graphene synthesis chamber for synthesizing graphene comprises chamber case in which substrate comprising metal thin film, gas supply unit, main heating unit which emits light to inner space to heat substrate; and auxiliary heating unit.

WON D, NAM W, WON D K, NAM W S

Method of manufacturing grapheme used in FET, involves forming graphene on catalyst layer by cooling catalyst layer, and taking out supporting belt, on which catalyst layer is loaded and graphene is formed, from chamber to outside.

CHO S, WON D, CHO S M, WON D K, CHO S H

Graphene manufacturing apparatus, comprises gas supplying unit for supplying gas, gas heating unit for heating gas, deposition chamber in which substrate is disposed and inlet pipe for supplying the gas into deposition chamber.

WON D, CHO S, WON D K, YUAN D