国家/地区 韩国（7） 中国（2）
IPC部 C（8） H（7） B（2）
IPC大类 C01（8） H01（7）
IPC小类 C01B（8）
IPC C01B033/02（8）
发明人 PARKSUNGHEE（3）
公开年 2021（8）
申请年 2019（8）
专利权人 UNIV WOOSONG（3）

Manufacturing graphene mxene-silicon-containing composite secondary battery cathode material comprises surface-modifying the silicon particle with alkoxysilane-based surface modifier, ultrasonically dispersing, freeze-drying and pulverizing.

PARKSUNGHEE

Manufacturing secondary battery anode material for coating on current collector comprises surface-modifying silicon particles with alkoxysilane-based surface modifier, dispersing, freeze-drying and calcining.

PARKSUNGHEE

Preparing electrode material useful for batteries, comprises mixing carbon material, graphene material, binder and silicon material, and sintering precursor for converting carbon material into graphite carbon material with sheet structure.

HAO K, WANG W, WANG J, CHEN Y, YUAN W

Anode active material used in lithium secondary battery, comprises silicon composite formed by dispersing nanosilicon particles on amorphous carbon matrix, and secondary silicone composite formed by assembling above silicone composite.

KIM H, KIM H J

Graphene-silicon airgel composite used as negative active material in lithium secondary battery, comprises silicon nanoparticles surrounded by reduced graphene oxide, and spherical composite dispersed in reduced graphene oxide.

YANG C M, KIM S Y, RYU J S, LEE M W, MINGOOK K, NA W

Anode material used in anode for lithium-ion secondary battery, comprises composite made of silicon particles containing microcrystalline silicon and conductive carbon-based material, and silane coupling agent coated on surface of composite.

PARK S, IMSUNGWOO, LIM J

Manufacturing graphene-silver nanowire-silicon-containing composite secondary battery anode material useful for coating current collector comprises modifying surface of the silicon particles with alkoxy silane-based surface modifier.

PARKSUNGHEE

Producing yolk-shell structure useful in cathode for lithium secondary battery, comprises forming graphene layer on surface of silicon particles, and vapor phase etching on outer surface of silicon particles inside graphene.

WHANG D M, LEE I