国家/地区 美国（4）
IPC部 C（4）
IPC大类 C01（4） C23（4） H01（4）
IPC小类 C01B（4）
IPC C01B032/186（4）
发明人 NARKEVICIUTE I（2） VARADARAJAN B N（2）
公开年 2021（4）
申请年 2020（2）  2021（2） 
专利权人 LAM RES CORP（2）

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Two dimensional (2D) hetero structure used in article of manufacture, comprises graphene deposited on substrate and borophene coupled with graphene on substrate to form 2D borophene- graphene hetero structure.

HERSAM M C, LIU X