国家/地区 中国（7）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B032/186（4） C01B032/184（2）
发明人 ZHANG J（6） LIU Z（4） LIN L（3）
PENG H（3） SUN L（3） SUN Y（3）
YANG L（3） GU K（2）
公开年 2018（4） 2017（3）
申请年 2017（7）
专利权人 UNIV PEKING（7）

Preparation of ultra-clean graphene involves using chemical vapor deposition, and providing foam copper above growth substrate.

LIU Z, PENG H, LIN L, ZHANG J, SUN L

Preparing graphene powder comprises e.g. reducing and preprocessing the crystalline flake graphite, then adding lithium and liquid ammonia to pretreated crystalline flake graphite, volatilizing liquid ammonia and adding water or dilute acid.

ZHANG J, YANG L, SUN Y, ZHAO F

Device for manufacturing graphene powder, has inlet and outlet system to introduce carbon source gas and inert gas into microwave chamber, and discharge reaction exhaust gas from main portion, and receiving system to store graphene powder.

ZHANG J, YANG L, SUN Y, LIU H, HAN D, HUANG H

Preparing ultra-clean graphene used in optical and electric field, involves adding copper substrate in tubular furnace, introducing carbon source gas and hydrogen for chemical vapor deposition and introducing carbon dioxide.

LIU Z, PENG H, ZHANG J, GU K, LIN L, SUN L

Preparation of ultraclean graphene comprises considering gas path from upstream to downstream direction, placing copper acetate and copper substrates at intervals and introducing hydrogen for chemical vapor deposition.

LIU Z, PENG H, GU K, ZHANG J, LIN L, SUN L

Preparing graphene powder, comprises placing initiator and substrate in a microwave device, then introducing inert gas and introducing carbon source, and subjecting to microwave irradiation to obtain final product.

LIN D, SUN Y, YANG L, ZHANG J

Realization of longitudinal and transverse graphene controlled preparation in plasma enhanced chemical vapor deposition comprising orderly using ethanol, acetone and isopropanol to clean the glass substrate, using argon gas blowing.

LIU Z, QI Y, ZHANG Y