国家/地区 中国（7）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B031/04（7）
发明人 CHEN C（7）
公开年 2014（6）
申请年 2014（7）
专利权人 INST COAL CH.（3） UNIV NANJING.（2）

Preparation of nitrogen and phosphorus co-doped graphene involves mixing phosphorus-containing compound, nitrogen-containing organic compound and hexacarbon compound, pulverizing, heating by introducing protective gas and cooling.

CHEN C, CHEN X, ZHANG J

Forming reduced graphene oxide thin film, by ultrasonically dispersing graphene oxide solution, coating the solution on indium tin oxide glass substrate, drying and placing substrate with graphene oxide film in a plasma discharge chamber.

LI J, WANG X, WEI J, WANG Q, CHEN C

Large-scale continuous production of high quality graphene by extruding graphene, heating in furnace, placing graphene powder in vacuum system, entering cyclone separator, separating graphene powder and gas, and collecting.

KONG Q, LI Y, WANG D, SU X, CHEN C, WANG W, ZHANG X, CAI R

Manufacturing graphene by combustible solvent reduction, comprises drying graphite oxide, then placing dried graphite oxide powder in a reaction container, impregnating with combustible solvent by combustion improver ignition and cooling.

KONG Q, LI Y, CHEN C, LIU Y

Preparation of nitrogen-doped graphene involves ultrasonically dispersing graphene oxide in water, preparing microbial fuel cell anolyte and catholyte, placing in anaerobic incubator, washing and drying.

HUANG Y, LIU L, SUN D, YANG J, CHEN C, ZHU C, FAN M, WU Q

Preparation of nitrogen-doped graphene involves preparing denitrifying bacteria in nutrient culture medium, adding nitrate, graphene oxide suspension and diluted hydrochloric acid, ultrasonically-crushing bacteria component and washing.

HUANG Y, LIU L, SUN D, YANG J, CHEN C, ZHU C, FAN M, WU Q, SUN R, DAI B

Preparation of nitrogen-doped graphene thin film for e.g. smartphone involves performing ultrasonic treatment to graphite oxide aqueous solution to obtain graphene oxide sol and mixing hydrazine hydrate solution and ethanol solution.

YANG Y, LV C, AN F, CHEN C, CAI R, SONG N