国家/地区 中国（4）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B032/188（4）
发明人 ZHANG Y（4）
公开年 2017（2）
申请年 2017（2） 
专利权人

Method for growing flat graphene with uniform layer thickness, comprises e.g. pyrolyzing silicon carbide on silicon carbide wafer under ultra-high vacuum conditions by controlling temperature of silicon carbide wafer.

ZHANG Y, JIN S, WANG C

Preparation of graphene-carbon nanotube composite structure used in device for e.g. electron emission by growing carbon nanotubes on substrate with catalytic element based on plasma enhanced chemical vapor deposition, and growing graphene.

DENG S, GUO C, ZHANG Y, XU N, CHEN J

Preparation of graphene involves placing insulating substrate in mixed solution of concentrated sulfuric acid and hydrogen peroxide and reacting, washing and placing in aqueous solution of graphene oxide, heating mixture, and cooling.

ZHUO Q, ZHANG Y

Structural graphene production on silicon carbide substrate for manufacturing microelectronic devices includes depositing layer of silicon dioxide as mask, coating mask surface, and exposing to form structured pattern.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F