国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（3） C23（2） H01（2）
IPC小类 C01B（3）
IPC C01B031/04（2） C23C014/06（2） C23C014/58（2）
发明人 CHUNG C（3）
公开年
申请年
专利权人 FOUND METAL .（2） METAL IND RE.（2）

Integrated chip comprises substrate, first conductive component above substrate and second conductive component, upper portion of substrate and transversely adjacent to first conductive component where concave hole transversely separating first conductive component and second conductive component.

SUI X, LI M, CHUNG C, LU M, YANG S, SHUE S, LEE M

Method for modifying e.g. I-V characteristics, of graphene i.e. semiconductor film, involves placing graphene film in vacuum environment, and radiating graphene film with electron beam to obtain graphene material.

HUANG C, CHU C, CHIU S, WANG C, WEI C, CHUNG C, WU B, HUANG J, QIU S, WANG J, ZHU J, WEI J, ZHONG C, HUANG C H, CHU C W, CHIU S M, WANG C C, WEI C M, CHUNG C J, WU B H

Manufacturing graphene layer by performing sputtering process to form graphite layer on substrate, and performing lithography process on graphite layer for thinning graphite layer and making graphite layer thinned to become graphene layer.

HUANG C, CHIU S, CHUNG C, WU B, HUANG J, QIU S, ZHONG C, HUANG C H, CHIU S M, CHUNG C J, WU B H