国家/地区 中国（6）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B031/02（6） C01B031/04（5） B82Y030/00（4）
B82Y040/00（4） H01L021/02（3） B82B003/00（2）
C01B032/188（2） C23C016/26（2） C23F001/00（2）
C30B029/02（2） H01B001/04（2） H01L021/20（2）
H01L031/04（2） H01L031/042（2）
发明人 VEERASAMY V（3） VEERASAMY V S（3）
公开年 2010（3） 2011（3）
申请年 2009（6）
专利权人 GUARDIAN GLA.（3） GUARDIAN IND（3） GUARDIAN IND.（3）

Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.

VEERASAMY V S, VEERASAMY V

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Solar cell comprises graphene-based conductive layer located on glass substrate, and another second graphene-based conductive layer in contact with semiconductor layer that is located in absorbing layer.

VEERASAMY V S, VEERASAMY V

Electronic device comprises porous graphene layer including graphene nanoribbon and electrically connecting two graphene electrodes.

KAERKKAEINEN A M, HAQUE S M, COLLI A, PASANEN P M, JOHANNES K L M, UUSITALO M A, LEHTINIEMI R K, KARKKAAINEN A M, HAQUE S, KARKKAINEN L M J, KARKKAINEN L, UUSITALO M, LEHTINIEMI R, KARKKAINEN L M Y, KAERKKAEINEN L M J

In situ preparation of composite film of graphene/carbon nanotube by placing mixture of ferrocene and sulfur in reactor, placing polycrystal nickel pieces, introducing hydrogen/argon mixed gas, heating, and cooling to room temperature.

LI C, LI X, WANG K, WEI J, WU D, ZHU H

Forming graphene layer used in e.g. transistors, solar panels, involves mixing carbon source with molten solvent, precipitating carbon source from solvent to form graphite layer, and separating graphite layer into several graphene layers.

SUNG C, HU S C, LIN I, YU C, SONG J