国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B031/04（3） B82Y040/00（2）
发明人
公开年 2013（3）
申请年 2012（3）
专利权人

Making strip shaped graphene layer used as conductive layer in semiconductive device, comprises making drawn carbon nanotube film, disposing carbon nanotube composite, removing polymer material and etching nanotube segment and graphene film.

LIN X, JIANG K, FAN S

Fabricating patterned graphene, comprises forming catalytic layer on substrate and carbon layer of e.g. iron on catalytic layer, photolithographically etching on carbon layer and heating obtained layer to form patterned graphene layer.

SUNG C, LIN I, LIN H, LIN Y, SONG J

Preparation of graphite/graphite pattern used in FET, by spin-coating photoresist onto substrate, thermally treating photoresist pattern to form graphite layer, and performing vapor deposition to form graphene-containing layer.

WANG X, ZHANG Z, GUO Y