国家/地区 中国（5）
IPC部 B（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C01B031/02（5）
发明人
公开年 2016（2）
申请年
专利权人

Preparing nanoscale graphene structure involves selecting substrate and growing graphene on substrate, depositing chromium film on graphene, etching graphene using ion beam etching technology, removing metallic film to obtain pure nanoscale.

GU C, LI J, QUAN B, YANG H, TANG C, ZHANG H

Manufacture of molded filter material involves forming support layer on graphene layer formed on initial stage substrate for graphene, forming water passage hole in support layer, and forming water passage hole in graphene layer.

KANEKO K, TAKAGI T, MURATA K, MURADA K, TAKAGE T, TAKAGI H

Manufacturing graphene film involves preparing catalyst metal having at least surface on which graphene is formed, forming support layer on graphene, and isolating graphene and support layer from catalyst metal.

NA D, LEE E, YOON J, NA D H, LEE E K, YOON J H, LI Y

Method for preparing patterned graphene film, involves soaking substrate in acetone or photoresist peeling solution to remove photoresist or poly(methyl methacrylate) on graphene film to obtain patterned graphene film.

DAI T, YAO Q, ZHANG F

Electronic device useful as e.g. electronic display, comprises graphene layer, planar hexagonal boron nitride layer operably associated with graphene layer, power source, phosphor layer, and metal atoms intercalated in boron nitride layer.

SUNG C, SONG J