国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B031/02（2） C01B031/04（2） C01B032/194（2）
G03F007/20（2）
发明人
公开年 2016（3）
申请年 2016（2） 
专利权人

Removal of graphene used for patterning monolayer or multilayer graphene film, by irradiation with UV light of specific wavelength in specific environment.

LIU H, WANG W, TAN H, QIN X

Preparing nanoscale graphene structure involves selecting substrate and growing graphene on substrate, depositing chromium film on graphene, etching graphene using ion beam etching technology, removing metallic film to obtain pure nanoscale.

GU C, LI J, QUAN B, YANG H, TANG C, ZHANG H

Manufacture of molded filter material involves forming support layer on graphene layer formed on initial stage substrate for graphene, forming water passage hole in support layer, and forming water passage hole in graphene layer.

KANEKO K, TAKAGI T, MURATA K, MURADA K, TAKAGE T, TAKAGI H