国家/地区 欧洲专利局（EPO）（3）
IPC部 C（3）
IPC大类 C01（3） C30（3） H01（3）
C23（2）
IPC小类 C01B（3）
IPC C30B025/18（3）
发明人
公开年 2017（2）
申请年 2016（3）
专利权人

Formation of multilayer structure, involves epitaxially depositing graphene layer on layer comprising cobalt that is in contact with dielectric layer and has semiconductor wafer with front wafer surface contacting dielectric layer.

BERRY V, BEHURA S, NGUYEN P, SEACRIST M R

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F