国家/地区 法国（4）
IPC部 C（4）
IPC大类 C01（4） H01（4） B82（3）
C23（2）
IPC小类 C01B（4）
IPC C01B032/184（4）
发明人 ZENASNI A（2）
公开年 2013（2）
申请年 2011（2） 
专利权人 CNRS CENT NA.（2） COMMISSARIAT.（2）

Making structure comprising oxidized graphene sheet doped with nitrogen and comprising phosphorus and oxygen-based groups used for supercapacitor, comprises e.g. adding nitrogen-based compound in aqueous suspension of graphene oxide.

STEVENS P, TOUSSAINT G, HABRIOUX A, COMMINGES C, ABIDAT I, NAPPORN T

Synthesizing graphene sheet on platinum silicide, by forming stack by e.g. placing first layer of diffusion barrier material on substrate and placing second layer of silicon carbonaceous material on first layer and thermally treating stack.

ZENASNI A

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A

Process for elaboration of graphene, useful e.g. in nanoelectronics, comprises depositing layer comprising amorphous carbon on substrate and annealing layer by photonic- and/or electronic-irradiation to obtain layer comprising graphene.

ZENASNI A, AJIJEU J