国家/地区 日本（4）
IPC部 C（4）
IPC大类 C01（4） H01（4） B82（3）
C23（3） C30（2）
IPC小类 C01B（4）
IPC C01B031/02（4）
发明人 VEERASAMY V（3） VEERASAMY V S（3）
公开年 2011（4）
申请年 2009（4）
专利权人 GUARDIAN GLA.（3） GUARDIAN IND（3） GUARDIAN IND.（3）

Electronic device e.g. organic thin-film transistor, photovoltaic cell, image scanner, memory device, useful for forming semiconducting layer on substrate comprises semiconducting layer containing organic semiconductor and graphene.

WU Y, HU N, LIU P, MAHABADI H K, SMITH P, BARANYI G, HU N X, SMITH P F

Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.

VEERASAMY V S, VEERASAMY V

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Solar cell comprises graphene-based conductive layer located on glass substrate, and another second graphene-based conductive layer in contact with semiconductor layer that is located in absorbing layer.

VEERASAMY V S, VEERASAMY V