国家/地区 台湾（15）
IPC部 C（15）
IPC大类 C01（15）
IPC小类 C01B（15）
IPC C01B032/182（8） B82Y040/00（4） C01B032/194（4）
B82Y030/00（3） H01L021/02（3） H01L029/16（3）
H01L029/78（3） C01B032/184（2） C01B032/186（2）
C08K003/04（2） C23C016/455（2） H01L021/336（2）
H01L029/10（2）
发明人
公开年 2022（12） 2023（3）
申请年 2022（15）
专利权人 TAIWAN SEMIC.（3）

Production of solid carbon used in composition of matter, involves receiving carbon dioxide and water in reactor, dissociating carbon dioxide and water to form dissociated species, exposing dissociated species to electric field to facilitate reactions, generating and outputting solid carbon.

STOWELL M W, SIENKO L, STOWELL W M

Process used for purification of graphite material, involves subjecting graphite material to oxidizing conditions, subjecting metal sulfide-lean graphite material to carbochlorination, and purging metal chlorides from metal chloride-rich graphite material, thus obtains purified graphite material.

BOISVERT R, BOULANGER P, BRASSARD M, DESAULNIERS E, NORVAL G, RIECKMANN P, TAN A, TAN Z

Use of polyalkylene oxides which have aromatic radical as dispersant for graphene material.

LEHMANN K, SCHUMANN S, LEICH V, BREUERS V, HOENIG J, HELLMANN L, HOVEN T, SEIDENSTICKER P

Transistor for semiconductor device, has channel layer that comprises graphene layer and hexagonal boron nitride sheets dispersed in graphene layer and arrangement directions of hexagonal boron nitride sheets that are aligned and source/drain region next to gate stack that is obtained.

CHEN Z, CHU Z, CHEN T, CHUU C

Preparing optionally substituted monocyclic aromatic hydrocarbons from optionally substituted furan, comprises contacting organic phase containing optionally substituted furan and ethylene with molecular sieve catalyst.

YANG W, LI X, WANG Z, FENG X, HAN X, XU R, LIU C, YUAN Z, QIAO J

Carbon-based material post-modification reactor, has feeding port located at a point upstream from reactor and adapted to feed carbon-based raw material into reactor, discharging port located at point downstream from reactor, screw conveying device disposed in reactor.

KU T, HSIEH C, LI J, GU D, XIE Z, LI Z

Graphene flake for regulating zero-point potential energy, has multi-component material surface charge modulation layer that is combined on surface of target object to modulate mesopotential of target surface.

CHANG C, TSENG I, SU Y

Upper electrode assembly used in plasma processing apparatus, has heat transfer sheet that is mounted between electrode plate and metal plate and having vertically oriented portion with vertically oriented graphene structures.

TSUJIMOTO H, KOBUNE T, LI L, LEE L, KOBUNEDAKAKI

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Transferring one or more nanostructures from one substrate to another substrate by applying coating of crosslinkable copolymer over one or more nanostructures on surface of substrate, heating, transferring nanostructures and copolymer onto another substrate surface, and removing copolymer.

ARNOLD M S, JACOBBERGER R M, GOPALAN P, DWYER J H